Feasibility Study of Extended-gate Type Silicon Nanowire Field-Effect Transistors for Neural Recording
Honggi Kang, J.Y. Kim, Y.K. Choi*, Y. Nam*
This is Dr. Kang's first publication since he joined NEL. We collaborated with Prof. Yang-Kyu Choi's lab to study the performance of silicon nanowire FET transistor for a novel sensing device of neural signals. The device was fabricated from Prof. Choi's lab by Dr. Kim and Dr. Kang did the measurement and analysis in terms of neural recordings. Unlike previous related works, we tried to compare the signal-to-noise ratio of the SiNW-FET with conventional metal micro electrodes.
Source: Kang et al., Sensors 2017 (link)